Semiconductor device having a reduced surface field strength

Details Semiconductor device having a reduced surface field strength Semiconductor device having a reduced surface field strength

1980-12-22

1983-12-20

Davie, James W.

357 13, 357 23, 357 35, 357 89, H01L 2976, H01L 2978, H01L 2972

Patent

active

044220898

ABSTRACT:
A semiconductor device of the "RESURF" type has a substrate region and a superimposed semiconductor layer which forms a p-n junction with the substrate region. The semiconductor layer has an island-shaped region which is depleted at least locally up to the surface at a reverse voltage applied across the p-n junction which is well below the breakdown voltage of the p-n junction. According to the invention the island-shaped part of the semiconductor layer over at least a part of its area has a doping profile in the vertical direction with at least two overlying layer portions with different average net doping concentrations and of the same or opposite conductivity type, so as to increase the current-carrying capacity of the semiconductor layer.

REFERENCES:
patent: 4233617 (1980-11-01), Klassen et al.
patent: 4292642 (1981-09-01), Appels et al.

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