Semiconductor device having a quantum wire and a method of produ

Details Semiconductor device having a quantum wire and a method of produ Semiconductor device having a quantum wire and a method of produ

1987-12-30

1989-05-30

Edlow, Martin H.

357 17, 357 55, 357 16, H01L 2712

Patent

active

048355780

ABSTRACT:
A semiconductor device comprises a first superlattice layer consisting of a first semiconductor layer that contains impurities and a second semiconductor layer that contains impurities at a low concentration, said first superlattice layer being formed on a semiconductor substrate; and a second superlattice layer that covers that exposed side walls of said first superlattice layer. A disordered region is formed in the vicinity of the first semiconductor layer of the second superlattice layer in order to realize quantum wires with the conventional manufacturing process. This makes it possible to easily fabricate a laser device, a light-emitting diode and a transistor having quantum wires to enhance their performance.

REFERENCES:
patent: 4701774 (1987-10-01), McIbroy
patent: 4711857 (1987-12-01), Chong
patent: 4731789 (1988-03-01), Thornton
patent: 4733282 (1988-03-01), Chong

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