Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1986-12-22
1988-01-19
Clawson, Jr., Joseph E.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 13, 357 35, 357 43, 357 51, 365 56, 365 91, H01L 2978
Patent
active
047207370
ABSTRACT:
A protection circuit for inner elements such as metal insulator semiconductor (MIS) field effect transistors in a semiconductor device of high packing density has been improved. The protection circuit comprises protective elements of two types. One type has a deep diffusion region providing the element with high surge capacity, that is an ability to withstand the energy of an incoming surge, and the other type has a shallow diffusion region providing a low breakdown voltage. With a combination of these two types of protective element, the protection circuit can withstand high energy of an input surge and, at the same time, provide a low protection voltage suitable to protect the inner elements from breakdown.
REFERENCES:
patent: 3673428 (1972-06-01), Athanas
patent: 3754171 (1973-08-01), Anzai et al.
patent: 4062039 (1977-12-01), Nishimura
patent: 4476476 (1984-10-01), Yu et al.
patent: 4503448 (1985-03-01), Miyasaka
patent: 4509067 (1985-04-01), Minami et al.
M. Battista et al., "Fabrication of a Bilevel Clamp", IBM Tech. Discl. Bull., vol. 19, #6, Nov. 1976, pp. 2086-2087.
Clawson Jr. Joseph E.
Fujitsu Limited
LandOfFree
Semiconductor device having a protection circuit with lateral bi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a protection circuit with lateral bi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a protection circuit with lateral bi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-373654