Semiconductor device having a protection circuit

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific voltage responsive fault sensor

Reexamination Certificate

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Details

C361S056000

Reexamination Certificate

active

06989980

ABSTRACT:
A semiconductor device having a protection circuit comprising an NPN type bipolar transistor having a collector and an emitter connected between an external connection terminal of the semiconductor device to be protected and a reference terminal, a PMOS transistor having a drain and source connected between the base and the collector of the NPN type bipolar transistor and configured to supply a base current to the base of the NPN type bipolar transistor, and a control circuit configured to supply the control signal to the gate of the PMOS transistor in response to a voltage emerging on the external connection terminal.

REFERENCES:
patent: 5173755 (1992-12-01), Co et al.
patent: 6465848 (2002-10-01), Ker et al.
patent: 6566715 (2003-05-01), Ker et al.
patent: 6690067 (2004-02-01), Ker et al.
patent: 6455902 (2004-03-01), Voldman
patent: 6704179 (2004-03-01), Voldman
patent: 2003/0016479 (2003-01-01), Song
patent: 2003/0026054 (2003-02-01), Hulfachor et al.
patent: 7-44250 (1995-02-01), None
patent: 11-332089 (1999-11-01), None
patent: WO 01/78148 (2001-10-01), None
Ming-Dou Ker, et al., “Substrate-Triggered ESD Protection Circuit Without Extra Process Modification”, IEEE Journal of Solid-State Circuits, vol. 38, No. 2, Feb. 2003, pp. 295-302.
Steven H. Voldman, et al., “An Automated ESD CAD System for BiCMOS SiGe Technology: A New Millennium for ESD Design”, IBM Micronews, vol. 8, No. 2, Second Quarter 2002, pp. 29-32.

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