Patent
1986-09-18
1987-05-12
James, Andrew J.
357 55, 357 20, 357 86, 357 15, H01L 2980
Patent
active
046654160
ABSTRACT:
A semiconductive device comprising a substrate of a semi-insulative material, a first impurity-doped semiconductive region of an n-conductivity type formed in the substrate, a second impurity-doped semiconductive region of p-conductivity type formed in the substrate. The second region has a generally U-shaped cross-section, one of the vertical limbs of the U adjoining the first region to form a p-n junction therewith and the web portion of the U being located in a position deeper than the bottom of the first region. First and second conductors are deposited on the first and second regions to provide an ohmic contact therewith.
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Hagio Masahiro
Kanazawa Kunihiko
Nanbu Shutaro
Ogata Shunji
Tohmori Shiro
James Andrew J.
Matsushita Electronics Corporation
Mintel William A.
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