Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Schottky barrier to polycrystalline semiconductor material
Reexamination Certificate
2010-10-22
2011-11-22
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Schottky barrier to polycrystalline semiconductor material
C257S219000, C257S256000, C257S269000, C257S475000, C257S655000
Reexamination Certificate
active
08063406
ABSTRACT:
Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and forming a second polysilicon layer over a surface of the first polysilicon layer. Also, various illustrative embodiments of semiconductor devices are described that may be manufactured such as by the various methods described herein.
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Lian Jingyu
Lipinski Matthias
Sarma Chandrasekhar
Zhuang Haoren
Banner & Witcoff , Ltd.
Infineon - Technologies AG
Pham Thanh V
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