Semiconductor device having a polycrystalline silicon film with

Details Semiconductor device having a polycrystalline silicon film with Semiconductor device having a polycrystalline silicon film with

1995-09-14

1997-09-23

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material with...

257 66, 257 75, 257627, 257628, H01L 2904

Patent

active

056707932

ABSTRACT:
A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.

REFERENCES:
patent: 5177569 (1993-01-01), Koyama et al.
patent: 5318919 (1994-06-01), Noguchi et al.
patent: 5444302 (1995-08-01), Nakajima et al.
patent: 5486237 (1996-01-01), Sano et al.

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