Semiconductor device having a polycrystalline silicon diode

Details Semiconductor device having a polycrystalline silicon diode Semiconductor device having a polycrystalline silicon diode

1978-03-02

1980-10-07

Larkins, William D.

357 20, 357 92, H01L 2904, H01L 2704

Patent

active

042272033

ABSTRACT:
A semiconductor device includes a substrate of one conductivity type and a polycrystalline silicon layer of the opposite conductivity type formed on a major surface of the substrate. A p-n junction establishing an effective diode is formed on the polycrystalline silicon layer as a result of the introduction of the impurities of the one conductivity type from the substrate into the polycrystalline silicon layer.

REFERENCES:
patent: 3443175 (1909-05-01), Czorny et al.
patent: 3570114 (1971-03-01), Bean et al.
patent: 3648128 (1972-03-01), Kobayashi
patent: 3651385 (1972-03-01), Kobayashi
patent: 3904450 (1975-09-01), Evans et al.
Davies et al., IEEE J. of Solid State Circuits, vol. SC 12, No. 4, Aug. 1977, pp. 367-375.
Hewlett, "Schottky I.sup.2 L," IEEE J. of Solid-State Circuits, vol. SC 10, No. 5, Oct. 1075, pp. 343-344.

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