Semiconductor device having a pn junction

Details Semiconductor device having a pn junction Semiconductor device having a pn junction

1988-03-21

1989-04-04

James, Andrew J.

357 61, H01L 3300

Patent

active

048190586

ABSTRACT:
A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI element. Thus, the concentration of vacancies and other defects acting as donor is reduced as compared with the concentration of the p type impurity to be introduced. This invention is suitable for producing light-emitting diodes emitting a light of short-wave lengths.

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Sze, S. M., "Physics of Semiconductor Devices", 2nd Ed., John Wiley and Sons, New York, 1981, p. 21.

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