Semiconductor device having a plurality of vertical type transis

Details Semiconductor device having a plurality of vertical type transis Semiconductor device having a plurality of vertical type transis

1993-09-16

1995-07-25

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257584, 257197, 257778, 257737, H01L 2940, H01L 2944, H01L 2973

Patent

active

054364973

ABSTRACT:
A semiconductor device is disclosed. The semiconductor device include: a semiconductor substrate; a plurality of vertical type construction transistors, each of the transistors including; a semiconductor multilayer formed on the semiconductor substrate, the semiconductor multilayer including at least an emitter layer, a collector layer, and a base layer; first, second, and third electrodes, the first electrode being electrically connected to the base layer, the second electrode being electrically connected to one of the emitter layer and the collector layer, the third electrode being formed on the semiconductor multilayer, and being electrically connected to the other of the emitter layer and the collector layer; a first interconnection, formed on the semiconductor substrate, for electrically connecting a plurality of the first electrodes to each other; a second interconnection, formed on the semiconductor substrate in a non-intersecting relationship with the first interconnection, for electrically connecting a plurality of the second electrodes to each other; and a plurality of bump electrodes configured to receive a third interconnection for electrically connecting the plurality of bump electrodes to each other, each of the plurality of bump electrodes being formed on a respective one of the third electrodes.

REFERENCES:
patent: 4268849 (1981-05-01), Gray et al.
patent: 4807021 (1989-02-01), Okumura
patent: 5296733 (1994-03-01), Kusano et al.
IEEE Transactions on Microwave Theory and Techniques, vol. 38, No. 10, Oct. 1990, Wang et al.: "Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBT's at 10 GHz," pp. 1381-1388.
GaAs IC Symposium, pp. 271-274, Bayraktaroglu et al.: "Monolithic X-Band Heterojunction Bipolar Transistor Power Amplifiers".

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