Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2001-01-26
2003-03-04
Lee, Eddie (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S686000, C257S695000, C257S723000, C257S737000, C257S777000, C257S778000, C257S780000
Reexamination Certificate
active
06528870
ABSTRACT:
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is based upon and claims the benefit of priority from the prior Japanese Patent Applications No. 2000-020292, filed Jan. 28, 2000; and No. 2000-160190, filed May 30, 2000, the entire contents of which are incorporated herein by reference.
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device incorporating a semiconductor chip mounted on a wiring board, a stacked-type semiconductor unit having a plurality of semiconductor devices stacked on a base board, and a method for manufacturing the same.
In recent years, a small memory card on which a flash memory is mounted is utilized in portable information equipment, for example, a digital still camera or a portable information terminal. The market of such a memory card has rapidly been expanded. In particular, the memory cards have been dominating in the field of the digital camera, and will supersede MDs (Mini Disks) and floppy disks.
With the above situation as a background, it is required that a small memory card including only flash memories be larger in capacity, smaller in size and weight, and lower in cost. For this purpose, various package structures and mount structures of a memory IC have been considered.
In general, a thin mold package, such as a TSOP (Thin Small Outline Package), is soldered to a base board, or a bare chip is directly connected to a base board by means of wire bonding or flip-chip bonding. Since the capacity of the given area is determined by a chip size, in order to increase the capacity, a stacked-type semiconductor unit has been required. This type of semiconductor device has a mount structure in which chips are stacked three-dimensionally in order to the overall size of the device or the pitch of the chips.
FIG. 29
shows a conventional stacked-type semiconductor unit. The stacked-type semiconductor unit has a plurality of, for example, four semiconductor devices
20
stacked one on another. Each semiconductor device
20
has a wiring board
24
including a sheet-like holding member
21
made of polyimid or the like and a wiring pattern
22
formed thereon. Bumps
23
made of gold or the like are formed on the wiring pattern
22
. A semiconductor chip
1
is mounted on the bumps
23
by flip-chip bonding. The semiconductor chip
1
is sealed with resin
7
, such as epoxy, and packaged.
The four semiconductor devices
20
each formed by packaging the semiconductor chip
1
are stacked and mounted on desired connecting lands
8
on a base board
3
via solders
25
, for example, solder balls. Each solder
25
is provided on an electrode
26
formed in an end portion of the wiring board
24
.
The solders
25
are formed on the electrodes
26
on the wiring board
24
by providing a solder ball or printing solder paste on the electrodes
26
. In either case, to firmly and stably connect the stacked wiring boards
24
, i.e., the semiconductor device
20
, to the base board
3
by the solders
25
, it is necessary to supply the solders
25
on the electrodes
26
, and thereafter to put the stacked four wiring boards
24
into a reflowing furnace, so that the solders
25
can be melted and fixed to the electrodes
26
.
However, when a plurality of semiconductor devices
20
are put in the reflowing furnace to fix the solders
25
, the wiring boards
24
may be warped by the influence of heat in the furnace. In addition, the connecting portion between the semiconductor chip
1
and the wiring pattern
22
may be damaged. As a result, defectives may exist in the semiconductor devices
20
, resulting in the decrease in manufacturing yield. Moreover, it is difficult to manage the process.
BRIEF SUMMARY OF THE INVENTION
An object of the present invention is to provide a semiconductor device, a stacked-type semiconductor unit, which can be manufactured by a simple process and the quality of which can be stable, and a method for manufacturing the same.
According to a first aspect of the present invention, there is provided a semiconductor device comprising:
a semiconductor chip having flexibility and including an internal electrode;
a wiring board having flexibility and including a wiring pattern electrically connected to the internal electrode of the semiconductor chip; and
an external electrode provided in an end portion of the wiring board and electrically connected to the wiring pattern.
According to another aspect of the present invention, there is provided a stacked-type semiconductor unit having a plurality of semiconductor devices stacked on a base board, each comprising a semiconductor chip having flexibility and including an internal electrode; a wiring board having flexibility and including a wiring pattern electrically connected to the internal electrode of the semiconductor chip; and an external electrode provided in an end portion of the wiring board and electrically connected to the wiring pattern, the stacked-type semiconductor unit comprising:
a base electrode formed on the base board; and
solder electrically connecting and fixing the external electrodes of the plurality of semiconductor devices to the base electrode, in a state where the plurality of semiconductor devices are stacked on the base electrode formed on the base board such that the external electrodes of the plurality of semiconductor devices are aligned.
Additional objects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out hereinafter.
REFERENCES:
patent: 5471151 (1995-11-01), DiFrancesco
patent: 6188127 (2001-02-01), Senba et al.
patent: 6239496 (2001-05-01), Asada
patent: 6246010 (2001-06-01), Zenner et al.
Arakawa Masayuki
Fukatsu Kenta
Fukuchi Yoshitoshi
Iguchi Tomohiro
Komatsu Tetsuro
Lee Eddie
Warren Matthew E.
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