Semiconductor device having a plurality of gate electrodes...

Details Semiconductor device having a plurality of gate electrodes... Semiconductor device having a plurality of gate electrodes...

2005-02-15

2005-02-15

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S270000, C257S365000

Reexamination Certificate

active

06855969

ABSTRACT:
A semiconductor device includes first and second gate electrode, first and second gate insulating film, semiconductor layer, source and drain regions, and source and drain electrodes. The first gate electrode is formed in the insulating film. The first gate insulating film is formed on the first gate electrode. The semiconductor layer is formed on the insulating film. The source and drain regions are formed in the semiconductor layer. The source and drain electrodes are respectively formed on the source and drain regions. The positions of side wall surfaces of the source and drain electrodes which face each other are substantially aligned with the positions of both side wall surfaces of the first gate electrode in a direction perpendicular to the surface of the insulating film. The second gate insulating film is formed on the semiconductor layer. The second gate electrode is formed on the second gate insulating film.

REFERENCES:
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patent: 2000-307117 (2000-11-01), None

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