Semiconductor device having a plated heat sink

Details Semiconductor device having a plated heat sink Semiconductor device having a plated heat sink

1997-02-27

1998-03-10

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

257713, 257717, 257720, 361688, 361707, 361704, 361711, H01L 2334, H01L 2306, H01L 720

Patent

active

057264945

ABSTRACT:
A semiconductor device having a plated heat sink structure is provided, in which an Au layer (5) high in thermal expansion coefficient is formed on the lower surface of a GaAs substrate (1) having a source electrode (2), a gate electrode (3) and a drain electrode (4) of a field effect transistor on the upper surface, and, a W layer (6) low in thermal expansion coefficient is formed on the lower surface of the Au layer (5). Warping of the device after mounted on a package is reduced on the ground of such a plated heat sink structure.

REFERENCES:
patent: 5045503 (1991-09-01), Kobiki et al.
patent: 5144413 (1992-09-01), Adlerstein

Affiliated with

Also associated with

Rating

Semiconductor device having a plated heat sink does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a plated heat sink, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a plated heat sink will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-142122