Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-08-31
1996-03-19
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257760, H01L 21321, H01L 23522
Patent
active
055005586
ABSTRACT:
An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film is formed on a semiconductor substrate to cover a horizontally spreading convex pattern and to fill in a concave portion. A portion of insulating film located on a planarized portion of convex pattern is selectively etched away so as to leave a frame-shaped insulating film having a width of 1-500 .mu.m at least on the outer periphery portion of convex pattern. Insulating film left on semiconductor substrate is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.
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Patent Abstracts of Japan, Kokai #06-021245 (Jan. 28, 1994) vol. 18, No . 225 (E-1541) Apr. 22, 1994.
Patent Abstracts of Japan, Kokai #02-219264 (Aug. 31, 1990) vol. 14, No. 520 (E-1002) Nov. 14, 1990.
S. Wolf, "Silicon Processing for the VLSI Era-Volume II," Lattice Press CA., U.S.A., pp. 238-239, undated.
Brown Peter Toby
Mitsubishi Denki & Kabushiki Kaisha
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