Semiconductor device having a photosensitive organic film, and p

Details Semiconductor device having a photosensitive organic film, and p Semiconductor device having a photosensitive organic film, and p

1999-11-02

2000-08-08

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, H01L 29812

Patent

active

06100555&

ABSTRACT:
A recess is made in the semiconductor substrate. A gate electrode has a sectional shape of "T" to have a head overhanging portion and is made in the recess. The gate electrode having a head overhanging portion. A capacitance film is formed under the head overhanging portion of the gate electrode. An ohmic electrode is formed on the semiconductor substrate and at both sides of the gate electrode. In the device, the capacitance film is made of a photosensitive organic film having a smaller permittivity than that of silicon oxide films. This semiconductor device has a small gate parasitic capacitance and the variation in the capacitance can be reduced.

REFERENCES:
patent: 5448086 (1995-09-01), Hida
patent: 5698888 (1997-12-01), Fukaishi
patent: 5856217 (1999-01-01), Nguyen et al.
patent: 5891783 (1999-04-01), Lin et al.

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