Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-02-29
1998-10-06
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257510, 257377, H01L 2358
Patent
active
058180982
ABSTRACT:
A graded-channel semiconductor device (10) is formed in a pedestal (12). The pedestal (12) is formed on a substrate (11) and improves the electrical characteristics of the device (10) compared to conventional device structures. The pedestal (12) has sides (13) that are bordered by a first dielectric layer (24) to provide electrical isolation. An interconnect structure (90) can be optionally formed in conjunction with the formation of the device (10). The interconnect structure (90) has a plurality of conductors (60, 97) that can be used to transport electrical signals across the device (10).
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Davies Robert B.
Dow Diann M.
Prendergast E. James
Wild Andreas A.
Zdebel Peter J.
Collopy Daniel R.
Fahmy Wael
Motorola Inc.
Seddon Kenneth M.
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