Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-01-24
1998-04-21
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257374, 257396, 438164, 438221, 438225, 438359, 438424, 438435, H01L 2976, H01L 2900
Patent
active
057420912
ABSTRACT:
A semiconductor device includes at least one passive device and is configured such that parasitic capacitances associated with the passive device are minimized. A substrate layer of the semiconductor device is formed of a substrate material characterized by a first dielectric constant. The substrate layer has at least one deep trench formed therein, and the deep trench is filled with a trench fill material characterized by a second, effective, dielectric constant that is lower than the first dielectric constant. A field layer is formed on a surface of the substrate layer over the deep trench. Finally, the passive device is formed on a surface of the field layer.
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Introduction to Electric Circuits, Fifth Edition Herbert W. Jackson, 1981.
Chang et al., "Large Suspended Inductors on Silicon and Their Use in a 2-.mu.m CMOS Amplifier" (IEEE Electronic Device Letters, vol. 14, No. 5, May 1993) pp. 246-248.
S. Wolf, Silicon Processing for the VLSI Era (vol. 2), (Lattice Press, 1990), pp. 51-58.
Abraham Fetsum
National Semiconductor Corporation
Thomas Tom
LandOfFree
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