Semiconductor device having a passivation layer

Details Semiconductor device having a passivation layer Semiconductor device having a passivation layer

1996-07-09

1998-06-09

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257636, 257646, H01L 310312, H01L 2358

Patent

active

057639051

ABSTRACT:
A semiconductor device comprising at least one SiC semiconductor layer; and passivation layers applied on at least a portion of a surface of the SiC semiconductor layer for passivation thereof; the passivation layers comprising at least a substantially insulating layer comprising crystalline AlN and placed next to the SiC semiconductor layer and a semi-insulating layer allowing a weak current to flow therein in a blocking state of the device; wherein the semi-insulating layer comprises at least one first sub-layer and at least one second sub-layer, the at least one first sub-layer having a smaller gap between a conduction band and a valence band thereof than the at least one second sub-layer and the at least one second sub-layer having dopants for auto-ionization thereof by transport of charge carriers thereof to a deeper energy state in the semi-insulating sub-layer.

REFERENCES:
patent: 3922475 (1975-11-01), Manasevit
patent: 4086613 (1978-04-01), Biet et al.
patent: 4375125 (1983-03-01), Byatt
patent: 5387804 (1995-02-01), Suzuki et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5650638 (1997-07-01), Harris et al.

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