Semiconductor device having a passivation layer

Details Semiconductor device having a passivation layer Semiconductor device having a passivation layer

1995-05-08

1997-07-22

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257631, 257636, 257646, H01L 310312

Patent

active

056506384

ABSTRACT:
A semiconductor device comprises at least one semiconductor layer (1-3) of SiC and a layer (6) applied on at least a portion of an edge surface (19) of said SiC-layer so as to passivate this edge surface portion. At least the portion of said passivation layer closest to said edge surface portion of the SiC-layer is made of a first crystalline material, and the passivation layer comprises a portion made of a second material having AIN as only component or as a major component of a crystalline alloy constituting said second material.

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