Semiconductor device having a passivating layer

Details Semiconductor device having a passivating layer Semiconductor device having a passivating layer

1977-12-27

1980-06-10

Clawson, Jr., Joseph E.

357 16, 357 54, 357 59, H01L 2934

Patent

active

042075866

ABSTRACT:
A semiconductor device includes a passivating layer to reduce and stabilize the surface recombination rate. The passivating layer is of polycrystalline semiconductor material and is of the same conductivity type as that of the underlying semiconductor material. The semiconductor material of the passivating layer differs from that of the underlying semiconductor layer and has a larger energy gap than the underlying layer.

REFERENCES:
patent: 3723201 (1973-03-01), Keil
patent: 3783351 (1974-01-01), Tsukada et al.
patent: 3997907 (1976-12-01), Nakamura et al.
patent: 4062034 (1977-12-01), Matsushita et al.
patent: 4114254 (1978-09-01), Aoki et al.
patent: 4121238 (1978-10-01), Bachmann et al.

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