Semiconductor device having a particular terminal arrangement

Details Semiconductor device having a particular terminal arrangement Semiconductor device having a particular terminal arrangement

1993-08-18

1994-09-13

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257724, 257706, H01L 2316, H01L 3902, H01L 2302

Patent

active

053471580

ABSTRACT:
A semiconductor device for accomplishing high speed switchings with a large current includes a radiation plate, a first conductor fixed on said radiation plate, a first insulating layer fixed on said first conductor, a second conductor fixed on said first insulating layer, at least one semiconductor element and a second insulating layer fixed on said second conductor, a third conductor fixed on said second insulating layer, a fourth conductor for electrically connecting the surface electrode of said semiconductor element with said third conductor, a first power terminal fixed on said second conductor, and a second power terminal fixed on said third conductor. To reduce the internal inductance, said first and second power terminals have a flat part whose width is larger in length than the height. Also, these terminals are adjacently arranged substantially parallel to each other. In this device, the main currents on said first and second power terminals, and on said second and fourth conductors flow in the opposite directions, thus further reducing the internal inductance.

REFERENCES:
patent: 4042952 (1977-08-01), Kraybill
patent: 4639759 (1987-01-01), Neidig et al.
patent: 4649416 (1987-03-01), Borkowski et al.
patent: 4907068 (1990-03-01), Amann et al.
patent: 4920405 (1990-04-01), Itoh et al.
patent: 5172215 (1992-12-01), Kobayashi et al.
patent: 5291065 (1994-03-01), Arai et al.
Harold Vetter. High-Performance Capacitors for Low-Inductance Circuits Power Conversion, Jun. 1991 Proceedings. pp. 141-148.

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