Semiconductor device having a package base with at least one...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S686000, C257SE23010

Reexamination Certificate

active

07898086

ABSTRACT:
A through electrode extends through a silicon substrate from the upper surface to the lower surface of the substrate to accomplish electrical conduction between the upper and lower surfaces of the substrate. The through electrode includes a plurality of slender through holes formed in a through electrode forming area of the silicon substrate. The slender through holes extend through the silicon substrate from the upper surface to the lower surface of the silicon substrate. The through electrode also includes a plurality of conductive bodies fitted in the slender through holes. The conductive bodies are electrically connected with each other.

REFERENCES:
patent: 6809421 (2004-10-01), Hayasaka et al.
patent: 7579553 (2009-08-01), Moriizumi
patent: 2004/0080013 (2004-04-01), Kimura et al.
patent: 2005/0014311 (2005-01-01), Hayasaka et al.
patent: 2005/0051883 (2005-03-01), Fukazawa
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patent: 2002-43502 (2002-02-01), None
patent: 2003-068857 (2003-03-01), None
patent: 2003-68857 (2003-03-01), None
patent: 2005-33105 (2005-02-01), None
patent: 2006-19455 (2006-01-01), None

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