Semiconductor device having a non-volatile memory transistor...

Details Semiconductor device having a non-volatile memory transistor... Semiconductor device having a non-volatile memory transistor...

2005-07-26

2005-07-26

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S649000, C257S760000

Reexamination Certificate

active

06921964

ABSTRACT:
A semiconductor device includes a non-volatile memory transistor100. An interlayer dielectric layer40is provided on a semiconductor layer10where the non-volatile memory transistor100is formed. The interlayer dielectric layer40is an insulation layer for electrically isolating a conductive layer30formed over the semiconductor layer10from the non-volatile memory transistor, and includes a layer42containing nitride.

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Communication from Japanese Patent Office re: counterpart application.

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