Semiconductor device having a non-single crystalline...

Details Semiconductor device having a non-single crystalline... Semiconductor device having a non-single crystalline...

2006-05-02

2006-05-02

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S056000, C257S458000

Reexamination Certificate

active

07038238

ABSTRACT:
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer disposed on the non-single-crystal semiconductor layer. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5×1018atoms/cm3or less.

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