Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1997-07-10
2000-05-02
Bowers, Charles
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438424, 438433, H01L 2176
Patent
active
060572094
ABSTRACT:
A semiconductor device and manufacturing process in which a nitrogen bearing isolation region is formed. In one embodiment of the invention, a semiconductor device is formed by forming, in a substrate, one or more trenches each of which define an isolation region. In each trench, an insulating region is formed. In each trench over the insulating region, a nitrogen bearing region is formed. The nitrogen bearing region may, for example, be a nitride. A semiconductor device consistent with one embodiment of the invention includes a substrate having a plurality of active regions and one or more nitrogen bearing isolation regions separating the active regions. Each isolation region generally includes an insulating region adjacent the substrate and a nitrogen bearing region disposed over the insulating region and separated from the substrate by the oxide region. The nitrogen bearing region may, for example, be a nitride. The nitrogen bearing region in the isolation region generally enhances device performance and can, for example, reduce boron penetration of the isolation region.
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Gardner Mark I.
Gilmer Mark C.
Advanced Micro Devices , Inc.
Blum David S
Bowers Charles
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