Semiconductor device having a mushroom gate with hollow space

Details Semiconductor device having a mushroom gate with hollow space Semiconductor device having a mushroom gate with hollow space

2006-02-14

2006-02-14

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S499000, C257S506000, C438S309000, C438S319000, C438S400000, C438S411000

Reexamination Certificate

active

06998695

ABSTRACT:
A method of manufacturing a semiconductor device has the steps of: forming a mushroom gate traversing an active region of a semiconductor substrate and having a fine gate and an expanded over gate formed thereon; coating a first organic material film on the semiconductor substrate; patterning the first organic material film and leaving the first organic material film only near the mushroom gate; coating a second organic (insulating) material film covering the left first organic material film; forming an opening through the second organic material film to expose the first organic material film; and dissolving and removing the first organic material film via the opening to form a hollow space in the second organic material film.

REFERENCES:
patent: 6040248 (2000-03-01), Chen et al.
patent: 6-120253 (1994-04-01), None
patent: 8-107119 (1996-04-01), None
patent: 9-27505 (1997-01-01), None
patent: 9-330937 (1997-12-01), None
patent: 10-150054 (1998-06-01), None

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