Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-05-10
2005-05-10
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C257S758000
Reexamination Certificate
active
06890857
ABSTRACT:
The present invention provides a semiconductor device which can prevent the oxidization of the surfaces of pad electrodes to enhance the connecting strength between the pad electrodes and external terminals. The semiconductor device according to the present invention comprises pad electrodes for use in connecting external electrodes and a multilayer wiring structure connected to the pad electrodes, wherein one surface of an insulating layer covering the pad electrodes and having openings over the pad electrodes for exposing the surfaces of the pad electrodes is in contact with a metal layer formed from one selected from precious metals and alloys containing the precious metals as main components.
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Partial English translation of Korean Patent Application No. 1999-64738.
“Electro-Chemical Deposition of Copper for ULSI Metallization,” by Dubin et al., VMIC Conference, Jun. 10-12, 1997, ISMIC-107/97/0069(c), pp. 69-74.
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VLSI Technology, 1983, ISBN 0-07-066594, pp. 554-559.
Harada Shigeru
Izumitani Junko
Takata Yoshifumi
Ho Tu-Tu
Renesas Technology Corp.
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