Semiconductor device having a multilayer wiring and the method f

Details Semiconductor device having a multilayer wiring and the method f Semiconductor device having a multilayer wiring and the method f

1997-03-21

1998-09-29

Arroyo, T. M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257503, 257522, 257773, H01L 2348, H01L 2352, H01L 2940, H01L 2900

Patent

active

058148884

ABSTRACT:
A semiconductor device with a multilayer wiring structure has an insulating substrate and first conductors formed on top of the insulating substrate with a groove between neighboring first conductors. An insulating film covers the first conductors as well as the grooves between the neighboring first conductors. A void serving to reduce electrostatic capacitance between the conductors is formed in the grooves. An interlayer insulating film is formed on top of the first conductors to prevent leakage current, and second conductors are formed on top of the interlayer insulating film.

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