Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-10-31
1995-11-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257754, 257773, 257763, H01L 2348, H01L 2346, H01L 2954
Patent
active
054669715
ABSTRACT:
A semiconductor device comprising: a semiconductor substrate; a plurality of conductive layers in which impuries are doped in a silicon composing the substrate; a wiring layer formed on the substrate via a first insulating layer and made chiefly of the silicon; a second insulating layer covering a surface of the substrate at an area including the conductive layers and the wiring layer; contact holes communicating respectively with the conductive layers and the wiring layer, the contact holes being formed by removing a part of the second insulating layer; and a multilayer interconnection layer electrically connected with the conductive layers and/or the wiring layer via the contact holes. The multilayer interconnection layer including a conductive silicon layer made chiefly of a polycrystalline silicon and contacting the conductive layers and/or the wiring layer, a barrier metal layer contacting the conductive silicon layer, and a metal wiring layer contacting the barrier metal layer. In the very small contact hole portions of the semiconductor device, the wiring region has a small contact resistance with the conductive region, e.g., the conductive layer formed on the substrate and the foundation wires made chiefly of silicon.
REFERENCES:
patent: 4800176 (1989-01-01), Kakumu et al.
patent: 4833519 (1989-05-01), Kawano et al.
patent: 4898841 (1990-02-01), Ho
patent: 4931845 (1990-06-01), Ema
patent: 5138425 (1992-08-01), Ichikawa
Jackson Jerome
Monin, Jr. Donald L.
Seiko Epson Corporation
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