Semiconductor device having a multilayer electrode structure and

Details Semiconductor device having a multilayer electrode structure and Semiconductor device having a multilayer electrode structure and

1990-09-18

1992-05-05

James, Andrew J.

357 35, 357 46, 357 49, 357 52, H01L 2972, H01L 2702, H01L 2934

Patent

active

051112671

ABSTRACT:
Disclosed herein is such multilayer electrode structure of transistor and thyristor that a second electrode region serving as an upper layer electrode region is formed on a second semiconductor region which is an active region and an insulating film which is formed on a first electrode region serving as an underlayer electrode region, whereby the second electrode region is directly in contact with the second semiconductor region for electrical connection. According to such electrode structure, the second electrode region is also formed on the insulating film while being in stable electrical connection with the second semiconductor region even if the same is formed by vacuum deposition. Thus, it is possible to obtain a semicondutor device having multilayer structure, which can be fabricated at a low cost and is excellent in electrode forming area efficiency.

REFERENCES:
patent: 4283733 (1981-08-01), Aumura
patent: 4646125 (1987-02-01), Takagi
patent: 4827322 (1989-05-01), Takata
patent: 4994880 (1991-02-01), Kato et al.
Japanese Patent Laying Opening Gazette-62-143454.

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