Semiconductor device having a multi-layered conductive structure

Details Semiconductor device having a multi-layered conductive structure Semiconductor device having a multi-layered conductive structure

1995-07-18

1997-07-08

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257764, 257765, 257915, H01L 2348

Patent

active

056464495

ABSTRACT:
A semiconductor having multi-layer metalization which has a metal layer between aluminum alloy and metal nitride layers, that prevents failure of interconnects when electromigration causes a discontinuity in the aluminum alloy layer. In a one embodiment, the metal of the metal layer and the metal of the nitride layer are both the same metal, such as titanium. In a method of manufacturing the semiconductor device, an insulating layer is formed on a surface of a semiconductor substrate, and in vacuum chambers, the alloy layer is formed on the insulating layer, a metal layer is formed on the alloy layer, and a metal nitride layer is formed on the metal layer in an nitrogen atmosphere. Sputtering, such as DC magnetron sputtering, RF-bias sputtering, or thermal evaporation deposition, may be used to apply the respective nitride, metal and alloy layers. If the same metal is used for the metal layer and the nitride layer, the same vacuum chamber may be used to apply both layers, by replacing an inert gas atmosphere used during metal layer deposition by a nitrogen gas atmosphere for use during the nitride layer deposition.

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Hiroshi Onoda et al, "Analysis of Electromigration-Induced Failures in Multilayered Interconnects", Sep. 9, 1993, IEEE Transactions on Electron Devices, pp 1614-1619.
T. Kikkawa et al, "A Quarter-micron Interconnection Technology Using Ai-SI-Cu/TiN Alternated Layers", International Electronic Devices Meeting, Dec. 1991, Washington, D.C., pp. 281-284.

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