Semiconductor device having a multi-layer metal interconnect str

Details Semiconductor device having a multi-layer metal interconnect str Semiconductor device having a multi-layer metal interconnect str

1999-03-05

2000-06-13

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257382, 257383, 257751, 257752, 257763, 438636, H01L 2348

Patent

active

060752939

ABSTRACT:
A multi-level metal interconnect structure in a semiconductor device includes a plurality of overlying metal layers separated by ILD layers and electrically connected by filled vias in the ILD layers. Each metal layer includes a relatively thick antireflective layer for improved electromigration resistance. Each metal layer also includes a metal lining layer and a metal interconnect layer overlying the metal lining layer. Enhanced electromigration resistance is obtained by forming the antireflective layer to a thickness of no less than the thickness of the metal lining layer. In a preferred embodiment of the invention, the antireflective layer has a thickness of about 1000 angstroms.

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patent: 5523624 (1996-06-01), Chen et al.
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patent: 5635763 (1997-06-01), Inoue et al.
patent: 5668410 (1997-09-01), Yamamoto
patent: 5883433 (1999-03-01), Oda
patent: 5883434 (1999-03-01), Noguchi
patent: 5910021 (1999-06-01), Tabara
patent: 5914277 (1999-06-01), Shinohara

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