Semiconductor device having a MOS structure

Details Semiconductor device having a MOS structure Semiconductor device having a MOS structure

1996-01-19

1998-03-03

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257315, 257773, 257758, H01L 2348, H01L 2352, H01L 2940

Patent

active

057239100

ABSTRACT:
A first Al wire is connected to a gate electrode. On the first Al wire, an insulating film is provided. In the insulating film, an opening with a large cross-sectional area is made so as to correspond to the first Al wire. In the periphery of the opening, the insulating film is etched by RIE to make an opening. In the central area, the insulating film is etched by wet etching to make an opening. Inside the opening thus made, a second Al wire is formed. The second Al wire is connected to the first Al wire inside the opening. When the opening is made, the number of electrons trapped in the gate oxide film is small because the area etched by RIE is small. Since RIE etches the first Al wire deeper than wet etching, recesses are made around the first Al wire located inside the opening. The first and second Al wires are connected to each other via the recesses.

REFERENCES:
patent: 5488243 (1996-01-01), Tsuruta et al.

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