Semiconductor device having a MOS-capacitor

Details Semiconductor device having a MOS-capacitor Semiconductor device having a MOS-capacitor

1978-07-31

1980-07-22

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 14, 357 37, 307304, 307303, 307320, H01G 2978

Patent

active

042142520

ABSTRACT:
A semiconductor element having a MOS-capacitor between a zone provided in an epitaxial layer on a substrate and a conductive layer on an insulating layer above the zone.
The stray capacitance between the zone and the substrate of the opposite conductivity type is considerably reduced in that the zone in the semiconductor body is surrounded by a further zone of the opposite conductivity type. The further zone may be applied to a fixed potential via a connection electrode.

REFERENCES:
patent: 3893146 (1975-07-01), Heeren
patent: 3953875 (1976-04-01), Cave

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