Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-05-04
2000-12-19
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257530, 257209, 438281, H01L 2900
Patent
active
061630624
ABSTRACT:
A semiconductor device has a plurality of fuse members (1a, 1b) composed of a metal that can be cut by laser light (4), disposed over a semiconductor substrate (5). The length L of the fuse members (1a, 1b) is smaller than a value obtained by subtracting an alignment error .alpha. of the laser light (4) from a spot diameter D of the laser light (4), i.e., the value (D-.alpha.). The fuse members (1a, 1b) are spaced a distance l larger than a value obtained by adding the alignment error .alpha. to the half of the spot diameter D, i.e., the value (D/2+.alpha.).
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Genjo Hideki
Hachisuka Atsushi
Ido Yasuhiro
Shiratake Shigeru
Taniguchi Koji
Cao Phat X.
Chaudhuri Olik
Mitsubishi Denki & Kabushiki Kaisha
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