Semiconductor device having a metal-insulator-metal capacitor

Details Semiconductor device having a metal-insulator-metal capacitor Semiconductor device having a metal-insulator-metal capacitor

1998-05-29

2000-11-07

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257306, 257310, H01L 2702

Patent

active

061440515

ABSTRACT:
A method for manufacturing a semiconductor device having a metal-insulator-metal (MIM) capacitor comprises the steps of forming a first dielectric film on a substrate, forming a MIM capacitor on the first dielectric film, forming a second dielectric film covering the MIM capacitor, selectively removing the first and second dielectric films to expose the substrate surface, surface treating using a hydrochloric acid solution, forming a third dielectric film on the second dielectric film and the substrate, and forming a transistor on the third dielectric film. The second dielectric film protects the capacitor insulator film of the MIM capacitor.

REFERENCES:
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5624864 (1997-04-01), Arita et al.
patent: 5670808 (1997-09-01), Nishihori et al.
patent: 5721700 (1998-02-01), Katoh
patent: 5818079 (1998-10-01), Noma et al.

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