Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2007-06-12
2007-06-12
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S134000, C257S136000
Reexamination Certificate
active
11138298
ABSTRACT:
A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.
REFERENCES:
patent: 4338618 (1982-07-01), Nishizawa
patent: 6917054 (2005-07-01), Onose et al.
patent: WO 95-18465 (1995-07-01), None
Materials Science Forum vols. 443-436 (2003) pp. 777-780.
IEEE Electron Device Letters vol. 24, No. 7, Jul. 2003, pp. 463-465.
Malhan Rajesh Kumar
Morishita Toshiyuki
Ohyanagi Takasumi
Watanabe Atsuo
Yamamoto Tsuyoshi
DENSO Corporation
Pham Hoai
LandOfFree
Semiconductor device having a metal conductor in ohmic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a metal conductor in ohmic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a metal conductor in ohmic... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3863607