Coherent light generators – Particular active media – Semiconductor
Patent
1992-05-15
1994-02-22
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 48, 372 46, H01S 319
Patent
active
052894835
ABSTRACT:
A semiconductor device includes a semiconductor structure (D3) of parallel semiconductor layers on a semiconductor substrate (1), in which layers a mesa (12) is formed which includes only a portion (D1) of the semiconductor layer structure (D3). Such devices as are useful in optoelectronic devices in which the mesa (12) forms part of a semiconductor diode laser or a radiation waveguide. During cleaving of such devices, for example for the formation of a mirror surface, damage often arises near the mesa (12), which is undesirable. The mesa (12), which projects from the device, is also easily damaged during further manipulation of the device. The semiconductor layer structure (D3) includes a sunken region (11) within which the semiconductor layer structure (D3) is at least partly recessed in the substrate (1), while the mesa (12) is positioned within the boundaries of the sunken region (11). As a result, the mesa (12) is also recessed at least partly, and thus is at least partly protected. In addition, less damage occurs near the mesa (12) during cleaving. When the mesa (12) is entirely recessed, the device is in addition particularly suitable for upside-down final mounting. In a method of making the device, a recess (11) is provided in the substrate (1) before the semiconductor layer structure (D3) and the mesa (12) therein are provided. This method is very simple and gives a high yield of devices having the required characteristics.
REFERENCES:
"New Stripe Geometry Laser With Simplified Fabrication Process' Electron". Lett. vol. 15, No. 14, Jul. 5, 1979, pp. 441-442.
De Poorter Johannes A.
Valster Adriaan
Biren Steven R.
Epps Georgia Y.
U.S. Philips Corp.
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