Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means
Patent
1994-12-27
1997-03-04
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular power supply distribution means
257208, 257211, 257758, 257390, H01L 2710
Patent
active
056082410
ABSTRACT:
In the memory cell matrix of a semiconductor integrated circuit device having a non-volatile semiconductor memory cell portion and a logic portion, a second-layered Al wires are formed on the first-layered Al wires, with an interlayer insulating film interposed therebetween. The pattern of the second-layered Al wires is the same as that of the first-layered Al wires. This structure reduces the labor for designing mask data, and increases the coating ratio of a resist to an Al layer while minimizing a reduction in the transmittance of ultraviolet ray. As a result, the amount of a reaction compound supplied from the resist into the Al layer for forming the second-layered Al wires increases, which prevents the second-layered Al wires from being undercut. Thus, the second and subsequent-layered Al wires of the logic portion can be effectively prevented from being thinned.
REFERENCES:
patent: 5160998 (1992-11-01), Itoh et al.
patent: 5289037 (1994-02-01), Savignac et al.
patent: 5441915 (1995-08-01), Lee
Chida Nobuyoshi
Matsumoto Osamu
Shibuya Sachiko
Yoshida Masayuki
Kabushiki Kaisha Toshiba
Tran Minhloan
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