Semiconductor device having a low-K dielectric layer

Details Semiconductor device having a low-K dielectric layer Semiconductor device having a low-K dielectric layer

2005-07-05

2005-07-05

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S522000

Reexamination Certificate

active

06914335

ABSTRACT:
An improved semiconductor device is described. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.

REFERENCES:
patent: 5886410 (1999-03-01), Chiang et al.
patent: 6037668 (2000-03-01), Cave et al.
patent: 6103616 (2000-08-01), Yu et al.
patent: 6114259 (2000-09-01), Sukharev et al.
patent: 6184142 (2001-02-01), Chung et al.
patent: 6383917 (2002-05-01), Cox
patent: 6737725 (2004-05-01), Grill et al.

Affiliated with

Also associated with

Rating

Semiconductor device having a low-K dielectric layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a low-K dielectric layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a low-K dielectric layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3414359