Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-05-02
2006-05-02
Lee, Hsien Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S327000, C257S336000, C257S344000, C438S301000, C438S302000, C438S305000
Reexamination Certificate
active
07038258
ABSTRACT:
The present invention provides a semiconductor device200having a localized halo implant250located therein, a method of manufacture therefore and an integrated circuit including the semiconductor device. In one embodiment, the semiconductor device200includes a gate244located over a substrate210, the substrate210having a source and a drain230located therein. In the same embodiment, located adjacent each of the source and drain230are localized halo implants250, each of the localized halo implants250having a vertical implant region260and an angled implant region265. Further, at an intersection of the vertical implant region260and the angled implant region265is an area of peak concentration.
REFERENCES:
patent: 6124616 (2000-09-01), Dennison et al.
patent: 6194278 (2001-02-01), Rengarajan
patent: 6248635 (2001-06-01), Foote et al.
patent: 6362052 (2002-03-01), Rangarajan et al.
patent: 6518135 (2003-02-01), Ahn
patent: 2003/0148564 (2003-08-01), Chang
patent: 2003/0209758 (2003-11-01), Lee et al.
patent: 2004/0110351 (2004-06-01), Narasimha
Liu Kaiping
Wu Zhiqiang
Brady III Wade James
Lee Hsien Ming
Telecky, Jr. Frederic J.
Texas Instruments Incorporated
Tung Yingsheng
LandOfFree
Semiconductor device having a localized halo implant therein... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a localized halo implant therein..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a localized halo implant therein... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3648142