Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2006-06-26
2008-11-04
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S108000, C438S617000, C438S618000, C438S621000, C257SE21502, C257SE21508, C257SE23021, C257SE23124, C257SE23194
Reexamination Certificate
active
07445958
ABSTRACT:
A manufacturing method of a semiconductor device, comprising the steps of forming an insulation layer, which has an opening section in an area including an area on an electrode pad, on a top surface of the semiconductor substrate on which the electrode pad is formed; at least forming a first barrier metal layer, which becomes a part of a leading wiring layer, in an inner peripheral surface of the opening section including the top surface of the electrode pad; at least forming a main conductor layer, which becomes a part of the leading wiring layer, in an area surrounded by the first barrier metal layer in the opening section; eliminating an upper portion of the main conductor layer at least to a position at which the first barrier metal layer is exposed, and forming a second barrier metal layer, which becomes a part of the leading wiring layer, so as to cover the whole top surface of the main conductor layer.
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Ishio Toshiya
Iwazaki Yoshihide
Mori Katsunobu
Nakanishi Hiroyuki
Suminoe Shinji
Birch & Stewart Kolasch & Birch, LLP
Lebentritt Michael S
Sharp Kabushiki Kaisha
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