Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-08-15
2006-08-15
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000, C257S737000, C257S751000
Reexamination Certificate
active
07091616
ABSTRACT:
A leading wiring layer is provided with a main conductor layer, a first barrier metal layer for covering bottom and side surfaces of the main conductor layer, and a second barrier metal layer for covering a top surface of the main conductor layer. This ensures the respective barrier metal layers to cover entire surroundings including the side, bottom and top surfaces of the main conductor layer.
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Ishio Toshiya
Iwazaki Yoshihide
Mori Katsunobu
Nakanishi Hiroyuki
Suminoe Shinji
Lee Eugene
Sharp Kabushiki Kaisha
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