Semiconductor device having a junction capacitance, an integrate

Details Semiconductor device having a junction capacitance, an integrate Semiconductor device having a junction capacitance, an integrate

1983-10-13

1985-08-20

Munson, Gene M.

357 14, 357 51, 357 63, 357 92, H01L 2704, H01L 2702, H01L 2992

Patent

active

045367841

ABSTRACT:
A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is epitaxially grown on a semiconductor substrate of the first conductivity type through the buried layer of the second conductivity type. A semiconductor junction capacitance is formed of the diffused layer of the first conductivity type and the buried layer of the second conductivity type, and the concentration of an impurity to be introduced into the buried layer of the second conductivity type is controlled.

REFERENCES:
patent: 3962718 (1976-06-01), Inoue et al.
patent: 4038680 (1977-07-01), Yagi et al.
patent: 4106048 (1978-08-01), Khajezadeh
patent: 4202006 (1980-05-01), Khajezadeh
patent: 4258379 (1981-03-01), Watanabe et al.

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