Semiconductor device having a interlayer insulation film...

Details Semiconductor device having a interlayer insulation film... Semiconductor device having a interlayer insulation film...

2007-11-21

2010-06-08

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S499000, C257S784000, C257SE23141

Reexamination Certificate

active

07732927

ABSTRACT:
The method includes the steps of forming a porous insulation film and wires on the substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.

REFERENCES:
patent: 2003/0116854 (2003-06-01), Ito et al.
patent: 2005/0124151 (2005-06-01), Cheng et al.
patent: 2003-100757 (2003-04-01), None
patent: 2004-179386 (2004-06-01), None

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