Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove
Reexamination Certificate
2006-07-11
2006-07-11
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Groove
C257S410000
Reexamination Certificate
active
07075169
ABSTRACT:
A hollow region is formed in a silicon substrate. A plurality of openings formed in the silicon layer on the hollow region is filled with a buried film. The bottom portion of the hollow region is formed with a plurality of silicon pillars, which support the silicon layer.
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Kohyama Yusuke
Minami Yoshihiro
Nagano Hajime
Sato Tsutomu
Yamada Takashi
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Wojciechowicz Edward
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