Semiconductor device having a hollow around a gate electrode and

Details Semiconductor device having a hollow around a gate electrode and Semiconductor device having a hollow around a gate electrode and

1993-10-27

1996-07-16

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257410, 257275, 257276, 257728, H01L 2980, H01L 31112, H01L 2976, H01L 2302

Patent

active

055369715

ABSTRACT:
A semiconductor device operating at a high frequency, includes: a semiconductor layer; a first electrode for being applied with a voltage to control a current flowing in the semiconductor layer; a second electrode and a third electrode electrically connected to the semiconductor layer, at least one of the second and third electrodes being elongated above the first electrode to form a hollow around the first electrode by surrounding the first electrode with the second and third electrodes and the semiconductor layer; a passivation film formed over the second and third electrodes; and wherein the first electrode is directly in contact with an atmosphere in the hollow.

REFERENCES:
patent: 4972250 (1990-11-01), Omou et al.
patent: 5219713 (1993-06-01), Robinson
patent: 5331203 (1994-07-01), Wojnarowski et al.
"Electronic Packaging and Interconnection", p. 8.51, C. Harper.
"Webster's Ninth New Collegiate Dictionary", Electrician Electronic, p. 401.
P. D. Gardner et al., "Self-Aligned-Gate GaInAs Microwave MISFET's, IEEE Electron Device Letters", vol. EDL-7, No. 6, pp. 363-364 (Jun. 1986).
European Search Report for Corresponding Application No. 93117419.7, date mailed Jan. 7, 1994.

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