Semiconductor device having a HMP metal gate

Details Semiconductor device having a HMP metal gate Semiconductor device having a HMP metal gate

2006-07-18

2006-07-18

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S274000, C257S351000, C257S338000, C257S388000

Reexamination Certificate

active

07078747

ABSTRACT:
A semiconductor device has a dual-gate electrode structure. The gate electrode has a layered structure including a doped polysilicon film, WSi2film, WN film and a W film. The WSi2film formed on the polysilicon film in the P-channel area is formed of a number of WSi2particles disposed apart from one another, preventing a bilateral diffusion of impurities doped in the polysilicon film.

REFERENCES:
patent: 11-233451 (1999-08-01), None
patent: 2003163348 (2003-06-01), None

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