Semiconductor device having a high-dielectric gate...

Details Semiconductor device having a high-dielectric gate... Semiconductor device having a high-dielectric gate...

2005-05-17

2005-05-17

Ghyka, Alexander (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S640000, C257S649000, C438S785000, C438S786000

Reexamination Certificate

active

06894369

ABSTRACT:
An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer to the Si substrate or the gate electrode are suppressed by arranging the high-K dielectric film sandwiched by nitrogen atomic layers on the Si substrate that is covered by an oxygen atomic layer.

REFERENCES:
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patent: 6602753 (2003-08-01), Koyama et al.
patent: 6770974 (2004-08-01), Ejiri
patent: 20010029068 (2001-10-01), Chittipeddi et al.
patent: 20020137339 (2002-09-01), Takeuchi
patent: 20040072383 (2004-04-01), Nagahama et al.
patent: 20040152340 (2004-08-01), Yamamoto et al
patent: 1 124 262 (2001-08-01), None
patent: 2001-267566 (2001-09-01), None

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