Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With means to increase breakdown voltage
Reexamination Certificate
2007-11-27
2007-11-27
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With means to increase breakdown voltage
C257S168000, C257S409000, C257S487000, C257S491000, C257S787000
Reexamination Certificate
active
11204052
ABSTRACT:
An ion-through region100, 102is provided as a first opening in a passivation film90on a source electrode70and a drain electrode80. The passivation film90is coated with a sealing resin to package the semiconductor device. At this point, the ion-through region100, 102is filled with the sealing resin to put the sealing resin into direct contact with the source electrode70and the drain electrode80. With this structure, movable ions accumulated at an interface of the sealing resin with the passivation film90in a high temperature and high humidity atmosphere are discharged to the source electrode70and the drain electrode80via the ion-through region100, 102and thus do not influence an N−-type extended drain region30. Therefore, the drain breakdown voltage can be improved.
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Kaneko Saichirou
Sawada Kazuyuki
Uno Toshihiko
Jackson Jerome
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Valentine Jami M
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